Project information
Vliv krycích vrstev na elektronové stavy v kvantových tečkách
- Project Identification
- GA202/09/0676
- Project Period
- 1/2009 - 12/2011
- Investor / Pogramme / Project type
-
Czech Science Foundation
- Standard Projects
- MU Faculty or unit
- Faculty of Science
- Cooperating Organization
-
Institute of Physics of the ASCR, v. v. i.
- Responsible person Jiří Oswald
Publications
Total number of publications: 8
2013
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Tuning of the valence band mixing of excitons confined in GaAs/AlGaAs quantum dots via piezoelectric-induced anisotropic strain
Physical Review B, year: 2013, volume: 87, edition: 7, DOI
2011
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ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS
3rd International Conference on NANOCON, year: 2011
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InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime
Journal of crystal growth, year: 2011, volume: 317, edition: 1, DOI
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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots
Physical Review B, year: 2011, volume: 83, edition: 12, DOI
2010
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Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
Applied Physics Letters, year: 2010, volume: 97, edition: 203107
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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Journal of crystal growth, year: 2010, volume: 312, edition: 8
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Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer
Journal of Physics: Conference Series, year: 2010, volume: 244, edition: 012086
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Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules
Journal of Physics: Conference Series, year: 2010, volume: 245, edition: 012027