Project information
MOVPE prepared materials and structures for electronic and optoelectronic devices
- Project Identification
- GA102/99/0414
- Project Period
- 1/1999 - 1/2001
- Investor / Pogramme / Project type
-
Czech Science Foundation
- Standard Projects
- MU Faculty or unit
- Faculty of Science
- Cooperating Organization
-
Institute of Physics of the ASCR, v. v. i.
- Responsible person prof. Ing. Eduard Hulicius, CSc.
- Responsible person doc. RNDr. Jana Toušková, CSc.
- Responsible person doc. Ing. Ivan Hüttel, DrSc.
- Responsible person doc. Ing. Josef Schröfel, DrSc.
During the period of the last six years Institute of Physics AV-CR has gradually developed the MOVPE(Metal-Organic Vapour Phase Epitaxy) technology of thin and ultrathin layer deposition of AIIIBV semiconductors. Co-operating laboratories both inside as well as outside the Institute have mastered a wide range of characterisation techniques and have started their own programmes based on MOVPE generated structures. In the coming three year period of continuing co-operation of Academic (FzU) and University research groups (MFF-Charles Univ., UIPL-Chem. Univ., FEL-Czech Tech. Univ., PrF-Masaryk Univ.) we would like to extend the use of our technological and characterisation expertise for the preparation of device type semiconductor structures or structures otherwise related to solving application problems. We would like to concentrate our efforts in the following fields: Quantum Dots -(QD), Quantum Wells - (QW) including strained structures for semiconductor lasers or detectors, Hall sensors (FzU) Photovo