The process of self organization during the epitaxial growth of a semiconductor heterostructure is a good candidate for the technology of very small structures (quantum wires and dots) with very interesting applications. In the proposed project the struc ture of self organized interfaces will be studied by x-ray scattering (small angle x-ray scattering, high-angle scattering, grazing-incidence scattering) and by means of atomic-force microscopy. The experimental results will be compared to the theoretica l simulations of epitaxial growth based on the Monte-Carlo simulations of the growth kinetics and on the calculations of the deformation field below the growing surface. Experiments will be performed on SiGe/Si SiC/Ge and PbSe/PbEuTe superlattices grown by molecular beam epitaxy. X-ray measurements will be carried out on laboratory x-ray sources as well as on the ESRF synchrotron in Grenoble. The structural changes of the self organized interfaces at high temperatures will be investigated by x-ray hight

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